Thin-Film Crystalline Silicon Solar Cells : Physics and Technology
Rolf. Brendel
Bok Engelsk 2011 · Electronic books.
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| Utgitt | Hoboken : : Wiley, , 2011.
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| Omfang | 1 online resource (308 p.)
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| Opplysninger | Description based upon print version of record.. - Thin-Film Crystalline Silicon Solar Cells; FOREWORD; PREFACE; Contents; SYMBOLS AND ACRONYMS; 1 INTRODUCTION; 1.1 Highest-efficiency crystalline Si solar cells; 1.2 Industrial crystalline Si solar cells; 1.3 Thin-film crystalline Si cells; 1.4 Physical problems with thin-film crystalline Si cells; 2 PHYSICAL LOSS MECHANISMS; 2.1 Limitations to photogeneration; 2.1.1 Solar spectrum; 2.1.2 Planar geometry; 2.1.3 Lambertian light trapping; 2.1.4 Geometrical light trapping; 2.1.5 Optimum geometrical light trapping; 2.1.6 Short-circuit current limits; 2.1.7 Beyond geometrical optics. - 2.2 Limitations imposed by radiative recombination2.2.1 Carnot efficiency; 2.2.2 Luminescence; 2.2.3 Optical absorption; 2.2.4 Non-concentration; 2.2.5 Thermalization; 2.3 Limitations imposed by non-radiative recombination; 2.3.1 Auger recombination; 2.3.2 Surface recombination; 2.3.3 Grain boundary recombination; 3 ADVANCE D QUANTUM EFFICIENCY ANALYSIS; 3.1 Definition of effective diffusion lengths; 3.1.1 Quantum efficiency diffusion length LQ; 3.1.2 Collection diffusion length Lc; 3.1.3 Current-voltage diffusion length Lj; 3.1.4 Interrelation of LQ and Lj. - 3.2 Reciprocity theorem for charge carrier collection3.2.1 Derivation from detailed balance; 3.2.2 Generalization to Fermi statistics; 3.3 Applications of the generalized reciprocity theorem; 3.3.1 General equality of LQ and LJ; 3.3.2 Quantum efficiency spectra; 3.4 Limiting recombination parameters derived from LQ; 3.4.1 Monocrystalline Si; 3.4.2 Polycrystalline Si; 3.5 Analytical quantum efficiency model for thin films; 3.5.1 Modeling the photogeneration rate; 3.5.2 Modeling the electronic transport; 3.5.3 Application to thin high-efficiency cells. - 3.6 Differential and actual recombination parameters4 TECHNOLOGICA L APPROACHE S TO THIN-FILM CELLS; 4.1 High-temperature substrate (HTS) approach; 4.1.1 Substrates; 4.1.2 Active layer; 4.1.3 Devices; 4.2 Low-temperature substrate (LTS) approach; 4.2.1 Substrates; 4.2.2 Active layer; 4.2.3 Devices; 4.3 Layer transfer process (LTP) approach; 4.3.1 Mitsubishi's VEST process; 4.3.2 Canon's ELTRAN process; 4.3.3 SOITEC's SMART CUT process; 4.3.4 Sony's SPS process; 4.3.5 ZAE Bayern's PSI process; 4.3.6 Epilift process of the University of Canberra; 4.3.7 QMS process of the University of Stuttgart. - 4.3.8 Canon's SCLIPS process4.3.9 Discussion; 5 WAFFLE CELLS FROM THE POROUS SI (PSI) PROCESS; 5.1 Epitaxy on porous Si; 5.1.1 Porous Si; 5.1.2 Ion-assisted deposition (IAD); 5.1.3 Chemical vapor deposition (CVD); 5.2 Module concepts; 5.2.1 Integrated series connection of IAD-grown films; 5.2.2 Parallel junction design with IAD-grown films; 5.2.3 Integrated series connection of CVD-grown films; 5.3 Optical absorption in Si waffles; 5.3.1 Hemispherical reflectance measurement; 5.3.2 Optical design parameters; 5.3.3 Detached back reflector; 5.4 Efficiency potential. - 5.4.1 Optimization of the period-to-thickness ratio. - This introduction to the physics of silicon solar cells focuses on thin cells, while reviewing and discussing the current status of the important technology. An analysis of the spectral quantum efficiency of thin solar cells is given as well as a full set of analytical models. This is the first comprehensive treatment of light trapping techniques for the enhancement of the optical absorption in thin silicon films.
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| ISBN | 3527403760
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