Silicon Surfaces and Formation of Interfaces : Basic Science in the Industrial World
Jarek. Dabrowski
Bok Engelsk 2000 · Electronic books.
| Annen tittel | |
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| Utgitt | Singapore : : World Scientific Publishing Company, , 2000.
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| Omfang | 1 online resource (576 p.)
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| Opplysninger | Description based upon print version of record.. - Contents; Preface; List of Figures; List of Tables; CHAPTER 1 Fundamental Concepts and Methods; 1.1. Introduction; 1.2. The Silicon Age; 1.2.1. The omnipresent silicon; 1.2.2. The MOS technology; 1.3. Methods of Modern Surface Science; 1.3.1. Theoretical techniques; 1.3.2. Experimental techniques; 1.4. Silicon Surfaces and Interfaces; 1.4.1. Fundamental concepts; 1.4.2. Free surfaces; 1.4.3. Buried interfaces; 1.5. Primary Silicon Surfaces and Their Vicinals; 1.5.1. Structures of Si(001); 1.5.2. Structures of Si(111); 1.5.3. Si(11n) surfaces; 1.5.4. Structures of Si(113). - 1.5.5. Structures of Si(110)CHAPTER 2 The Famous Reconstruction of Si(001); 2.1. Introduction; 2.1.1. Overview: expectations bias our predictions; 2.2. Pre-STM Era: Groping through the Dark; 2.2.1. Early observations and models; 2.2.2. Dimers, chains, vacancies, or may be something else?; 2.2.3. The mysterious fourfold periodicity strikes back; 2.2.4. Buckling of dimers; 2.2.5. Simple models lose some credit; 2.3. To Buckle or Not to Buckle?; 2.3.1. The first group photo of dimers; 2.3.2. Electronic structure attracts more attention; 2.3.3. Seeing is believing. - 2.3.4. The sobering variety of opinions2.4. A Clear Picture Finally Emerges; 2.4.1. Reconciliations; 2.4.2. Completing the picture; 2.5. Conclusions and Summary; 2.5.1. What did we learn; 2.5.2. What is still missing; CHAPTER 3 Geometries of Clean Si(001); 3.1. Introduction; 3.2. Perfect Si(001); 3.2.1. The {001}-truncated bulk; 3.2.2. Atomic structures; 3.2.3. Electronic structures; 3.3. Surface Defects; 3.3.1. Point defects; 3.3.2. Surface steps and vicinal Si(001); 3.4. Metastable Structures; 3.4.1. Si(001) 2 x n; 3.4.2. Si(001) c(4x4); 3.4.3. Translational domain boundaries. - 5.2.1. Hydrogen adsorption, etching, and structures on Si(001)5.2.2. Desorption of hydrogen and buckling of dimers; 5.2.3. Hydrogen and epitarial growth; 5.3. Halogens: Etching; 5.3.1. Fluorine and hydrofluoric acid; 5.3.2. Chlorine, bromine and iodine; 5.4. Oxygen: Isolation and Protection; 5.4.1. Oxygen and its bonds with silicon; 5.4.2. Adsorption of O2 on Si(001); 5.4.3. Adsorption sites of atomic oxygen on Si(001); 5.4.4. Active etching and passive oxidation; 5.5. Water: UHV Pest and a Renowned Oxidant; 5.5.1. Water, ice, and hydrogen bonds; 5.5.2. Adsorption and dissociation of water. - 5.5.3. Oxidation and etching by water. - CHAPTER 4 Evolution of Clean Si(001)4.1. Introduction; 4.2. Surface Diffusion; 4.2.1. Isolated mobile objects on clean Si(001); 4.2.2. Interactions between mobile objects on Si(001); 4.2.3. Interactions between mobile objects and Si(001) steps; 4.3. Surface Vibrations and Phase Transitions; 4.3.1. Surface transitions on the flat Si(001); 4.3.2. Vicinal Si(001): phase transitions, interaction of steps; 4.4. Deposition and Sublimation of Si; CHAPTER 5 Adsorption on Silicon Surfaces; 5.1. Introduction; 5.2. Hydrogen: Passivation and Etching. - Silicon, the basic material for a multibillion-dollar industry, is the most widely researched and applied semiconductor, and its surfaces are the most thoroughly studied of all semiconductor surfaces. Silicon Surfaces and Formation of Interfaces may be used as an introduction to graduate-level physics and chemical physics. Moreover, it gives a specialized and comprehensive description of the most common faces of silicon crystals as well as their interaction with adsorbates and overlayers. This knowledge is presented in a systematic and easy-to-follow way. Discussion of each system is preceded
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| Emner | |
| Sjanger | |
| Dewey | |
| ISBN | 9810232861
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