Kinetic Processes : Crystal Growth, Diffusion, and Phase Transformations in Materials
Kenneth A. Jackson
Bok Engelsk 2006 · Electronic books.
| Utgitt | Hoboken : : Wiley, , 2006.
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| Omfang | 1 online resource (427 p.)
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| Opplysninger | Description based upon print version of record.. - Kinetic Processes; Contents; Preface; 1 Introduction; 1.1 Arrhenius Plot; 1.2 The Relationship between Kinetics and Thermodynamics; 1.3 The Boltzmann Distribution; 1.4 Kinetic Theory of Gases; 1.5 Collisions; 2 Diffusion in Fluids; 2.1 Diffusion in a Gas; 2.2 Diffusion in Liquids; 2.2.1 Diffusion Distances; 2.2.2 Molecular Dynamics Simulations of Diffusion in Liquids; 2.2.3 Measurement of Diffusion Coefficients in Liquids; 3 Diffusion in Amorphous Materials; 3.1 Amorphous Materials; 3.2 Network Glass Formers; 3.2.1 Silica; 3.2.2 Silicon and Germanium; 3.3 The Glass Transition. - 10.2.1 Growth from Aqueous Solutions. - 3.4 The Free-Volume Model3.5 Fictive Temperature; 3.6 Diffusion in Polymers; 3.7 The Stokes-Einstein Relationship; 4 Diffusion in Crystals; 4.1 Diffusion in a Crystal; 4.2 Diffusion Mechanisms in Crystals; 4.2.1 Vacancy Diffusion; 4.2.2 Interstitial Diffusion; 4.4 Equilibrium Concentration of Vacancies; 4.4.1 Thermodynamic Analysis; 4.4.2 Kinetic Analysis; 4.5 Simmons and Balluffi Experiment; 4.6 Ionic and Covalent Crystals; 4.7 Stoichiometry; 4.8 Measurement of Diffusion Coefficients; 4.9 Surface Diffusion; 4.10 Diffusion in Grain Boundaries; 4.11 Kirkendall Effect; 4.12 Whisker Growth. - 4.13 Electromigration5 Diffusion in Semiconductors; 5.1 Introduction; 5.2.1 Vacancy Diffusion in Silicon; 5.2.2 Diffusion of Phosphorus in Silicon; 5.2.3 Diffusion of Arsenic in Silicon; 5.2.4 Diffusion of Boron in Silicon; 5.3 Diffusion of Zinc in GaAs; 5.4 Recombination-enhanced Diffusion; 5.5 Doping of Semiconductors; 5.6 Point-Defect Generation in Silicon during Crystal Growth; 5.7 Migration of Interstitials (and Liquid Droplets) in a Temperature Gradient; 5.8 Oxygen in Silicon; 5.9 Gettering; 5.10 Solid-State Doping; 6 Ion Implantation; 6.1 Introduction; 6.2 Ion Interactions. - 6.3 Implantation Damage6.4 Rutherford Backscattering; 6.5 Channeling; 6.6 Silicon-on-Insulator; 7 Mathematics of Diffusion; 7.1 Random Walk; 7.2 The Diffusion Equation; 7.3 Solutions to the Diffusion Equation; 7.3.1 Gaussian Concentration Distribution; 7.3.2 Error Function Concentration Distribution; 7.3.3 p/n Junction Depth; 7.3.4 Separation of Variables; 7.4 Numerical Methods; 7.4.1 Finite Difference Method for Diffusion; 7.4.2 Initial Surface Concentration Boundary Conditions; 7.4.3 Implanted Concentration Profile; 7.4.4 Zero Flux Boundary Condition; 7.5 Boltzmann-Matano Analysis. - 8 Stefan Problems8.1 Steady-State Solutions to the Diffusion Equation; 8.2 Deal-Grove Analysis; 8.3 Diffusion-Controlled Growth of a Spherical Precipitate; 8.4 Diffusion-Limited Growth in Cylindrical Coordinates; 9 Phase Transformations; 9.1 Transformation-Rate-Limited Growth; 9.2 Diffusion-Limited Growth; 9.3 Thermally Limited Growth; 9.4 Casting of Metals; 9.5 Operating Point; 10 Crystal Growth Methods; 10.1 Melt Growth; 10.1.1 Czochralski Growth; 10.1.2 Floating Zone; 10.1.3 Bridgman Method; 10.1.4 Chalmers Method; 10.1.5 Horizontal Gradient Freeze; 10.2 Solution Growth. - The formation of solids is governed by kinetic processes, which are closely related to the macroscopic behaviour of the resulting materials. With the main focus on ease of understanding, the author begins with the basic processes at the atomic level to illustrate their connections to material properties. Diffusion processes during crystal growth and phase transformations are examined in detail. Since the underlying mathematics are very complex, approximation methods typically used in practice are the prime choice of approach. Apart from metals and alloys, the book places special emphasis on th
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| ISBN | 3527306943
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